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| 1MBI400U-120 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1200V / 400A 1 in one-package Equivalent Circuit Schematic Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 600 400 1200 800 400 800 2155 +150 -40 to +125 2500 3.5 4.5 1.7 Unit V V A Continuous 1ms Tc=25C Tc=80C Tc=25C Tc=80C 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 AC:1min. Screw Torque Mounting *2 Terminals *2 Terminals *2 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5 or M6), Terminal 3.5 to 4.5 N*m(M6), 1.3 to 1.7 N*m(M4) W C VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=400A VGE=15V RG=1.5 VGE=0V IF=400A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 1.95 - 2.20 - 1.75 - 2.00 - 45 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.80 - 1.90 - 1.60 - 1.70 - - - 0.40 Unit Max. 4.0 800 8.5 2.30 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.10 - 1.90 - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=400A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0125 Unit Max. 0.058 0.100 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 1MBI400U-120 Characteristics (Representative) IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 1000 VGE=20V 15V 800 Collector current : Ic [A] Collector current : Ic [A] 12V Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 1000 VGE=20V 15V 12V 800 600 10V 400 600 10V 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25C Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 800 Collector current : Ic [A] 8 600 Tj=125C 6 400 4 Ic=800A Ic=400A Ic=200A 200 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Dynamic Gate charge (typ.) Vcc=600V, Ic=400A, Tj= 25C VGE 10.0 Cres Coes 1.0 0 10 20 30 VCE 0 0 500 1000 1500 2000 2500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 1MBI400U-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.5, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.5, Tj=125C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 200 400 600 800 Collector current : Ic [ A ] 10 0 200 400 600 800 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 80 70 60 50 40 30 20 10 0 0.1 1.0 10.0 100.0 0 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.5 Eoff(125C) ton toff 1000 Eoff(25C) Err(125C) Eon(125C) Err(25C) Eon(25C) tr 100 tf 10 200 400 600 800 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=15V, Tj= 125C 300 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.5 ,Tj <= 125C 1000 800 200 Eon Collector current : Ic [ A ] 600 400 100 Eoff 200 Err 0.10 1.00 10.00 100.00 0 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] Gate resistance : Rg [ ] 1MBI400U-120 Forward current vs. Forward on voltage (typ.) chip 1000 Tj=25C 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=1.5 Forward current : IF [ A ] 800 600 Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Irr (125C) Irr (25C) trr (125C) trr (25C) 100 400 200 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 200 400 600 800 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 Thermal resistanse : Rth(j-c) [ C/W ] 0.100 FWD IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M127 |
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